机读格式显示(MARC)

• 000 00835cam 2200277 a 4500

• 001 0000502696

• 003 CAL

• 005 20050318095300.0

• 008 050318s1982 nyua b 00110 eng

• 010 __ |a 81007607

• 020 __ |a 0471085006

• 040 __ |c PUL

• 050 00 |a TK7871.99.M44 |b N52 1982

• 082 00 |a 621.3815/2 |2 19

• 090 __ |a TN304.11/N646

• 093 __ |a TN304.11 |2 4

• 099 __ |a CAL 022000274403

• 100 1_ |a Nicollian, E. H.

• 245 10 |a MOS (metal oxide semiconductor) physics and technology / |c E.H. Nicollian, J.R. Brews.

• 260 __ |a New York : |b Wiley, |c c1982.

• 300 __ |a xv, 906 p. : |b ill. ; |c 25 cm.

• 500 __ |a "A Wiley-Interscience publication."

• 504 __ |a Includes bibliographical references and indexes.

• 650 _0 |a Metal oxide semiconductors.

• 700 1_ |a Brews, J. R.

• 950 __ |a JHUL |b TN304.11 |c N646