机读格式显示(MARC)
- 000 02497cam a2200325 i 4500
- 008 201116s2021 si a b 000 0 eng d
- 020 __ |a 9789811590498 : |c CNY846.36
- 040 __ |a SFB |b eng |c SFB |e rda |d OCLCO |d YDX |d GZM |d YDXIT |d GW5XE |d ERF |d OCLCF |d N$T |d DCT |d VT2 |d LIP |d OCL |d OCLCO |d WAU
- 245 00 |a Fundamental properties of semiconductor nanowires / |c Naoki Fukata, Riccardo Rurali, editors.
- 264 _1 |a Singapore : |b Springer, |c [2021]
- 300 __ |a viii, 454 pages : |b illustrations (some color) ; |c 24 cm
- 336 __ |a text |b txt |2 rdacontent
- 337 __ |a unmediated |b n |2 rdamedia
- 338 __ |a volume |b nc |2 rdacarrier
- 504 __ |a Includes bibliographical references.
- 505 0_ |a Part I: Growth -- 1. Growth -- Part II: Functionalization -- 2. Surface science -- 3. Doping -- Part III: Characterization -- 4. In-situ TEM -- 5. Time-resolved in-situ X-ray -- 6. Characterisation of semiconductor nanowires by electron beam induced microscopy and cathodoluminescence -- 7. Optical Spectroscopy -- 8. Raman Spectroscopy -- 9. First-principles calculations -- Part IV: Applications -- 10. FET -- 11. Laser.
- 520 __ |a This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires' growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functionalization: nanowires have a high surface-to-volume ratio and thus are well-suited to surface modification, which effectively functionalizes them. The book also discusses the latest advances in the study of impurity doping, a crucial process in nanowires. In addition, considerable attention is paid to characterization techniques such as nanoscale and in situ methods, which are indispensable for understanding the novel properties of nanowires. Theoretical calculations are also essential to understanding nanowires' characteristics, particularly those that derive directly from their special nature as one-dimensional nanoscale structures. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.
- 650 _0 |a Semiconductors.
- 700 1_ |a Fukata, Naoki, |e editor.
- 700 1_ |a Rurali, R. |q (Riccardo), |e editor.