MARC状态：审校 文献类型：西文图书 浏览次数：28
- 题名/责任者:
- Epitaxial graphene on silicon carbide : modeling, characterization, and applications / edited by Gemma Rius, Philippe Godignon.
- 出版发行项:
- Singapore : Pan Stanford Publishing, 2018.
- ISBN:
- 9789814774208
- 载体形态项:
- xii, 248 pages : illustrations (some color) ; 24 cm
- 附加个人名称:
- Rius, Gemma, editor.
- 附加个人名称:
- Godignon, Philippe, editor.
- 论题主题:
- Graphene.
- 论题主题:
- Silicon carbide.
- 论题主题:
- Epitaxy.
- 论题主题:
- Epitaxial growth.
- 中图法分类号:
- O613.71
- 书目附注:
- Includes bibliographical references and index.
- 摘要附注:
- This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition.
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